A figure of merit for the high-frequency noise behavior of bipolar transistors
نویسندگان
چکیده
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A Theory of High-Frequency Distortion in Bipolar Transistors
High-frequency distortion in bipolar transistors is examined by using the charge-control approach of Poon and Narayanan to connect the device’s distortion behavior to its “loaded” unity–current–gain frequency (^ ). The resulting expressions for the distortion reveal considerable information on its frequency and bias dependence. Points on the ^ versus collector current curve yielding optimum dis...
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ژورنال
عنوان ژورنال: IEEE Journal of Solid-State Circuits
سال: 1994
ISSN: 0018-9200
DOI: 10.1109/4.315206